Thin film SiO2 sputtering deposition services for insulation layer | Martini Tech

Thin film SiO2 sputtering deposition services

Thin film SiO2 sputtering for insulation layer

In case you may need thin film deposition of metals, silicides, nitrides, alloys and other compounds by sputtering, please have a look at our main thin film sputtering page.

SiO2 sputtering is a very good alternative to traditional CVD deposition of SiO2 thin film as insulation layer.
CVD deposited thin film SiO2 has good physical characteristics but the deposition process requires a long time.
Martini Tech offers thin film SiO2 sputtering services that combine the good characteristics of CVD thin film deposition with a much faster process time.
Please have a look at the parameters below to understand how SiO2 deposition by sputtering compares with SiO2 CVD deposited.

 

SiO2 sputtering service: comparison with CVD-deposited SiO2

Sample Number Standard 1 Standard 2 Standard 3 CVD deposited
Film
Pressure
(nm)
(1) 213 210 105 185
(2) 215 210 108 187
(3) 213 209 105 183
(4) 189 189 92 168
Relative
Permittivity
(1) 3.88 4.03 3.93 3.92
(2) 3.82 3.95 4.01 4.02
(3) 3.94 4.13 4.03 3.90
(4) 3.93 3.96 4.06 3.99
Dielectric
Tangent
(1) 9.42E-03 8.19E-03 0.062 0.055
(2) 3.98E-02 2.61E-02 0.053 0.033
(3) 4.17E-02 2.32E-02 0.059 0.032
(4) 6.29E-03 2.35E-02 0.066 0.044
  • Tolerance in relative permittivity is approx.+/-0.15 based on the assumption that tolerance of film thickness and electrode dimension is approx. 3%.
  • Relative permittivity is almost same as CVD-deposited SiO2.
  • Difference of dielectric tangent among different specimen is relatively small and is about the same as CVD-deposited SiO2.
C-V SiO2
C-V SiO<sub>2</sub>

 

SiO2 sputtering service: C-V measurement

I-V Standard 1 , Standard 2 (TR6147:0~100V)
I-V Standard 1 , Standard 2 (TR6147:0--100V)
Leak current increment and breakage of insulation can not be observed up to 110V in both (1) and (2).
I-V Standard 1 , Standard 2 (HP4339A 1000Vmax)
I-V Standard 1 , Standard 2 (HP4339A 1000Vmax) I-V Standard 1 , Standard 2 (HP4339A 1000Vmax)
I-V (HP6143:0~110V)
I-V (HP6143:0--110V)I-V (HP6143:0--110V)

I-V (HP6143:0--110V)I-V (HP6143:0--110V)

 
 

SiO2 sputtering service: C-V measurement result

Sample Number Standard 1 Standard 2 Standard 3 CVD deposited
(1) 11.7 11.4 6.8 5.5
(2) 11.6 10.2 5.2 10.7
(3) 10.8 12.0 6.9 10.9
(4) 9.5 12.2 11.3 10.1
  • 4 measured points in either Standard 1 and 2 show good resistivity as CVD-deposited SiO2.
  • No noticeable difference among specimens.
Durbles